2134/11673570.v1 Adam Danielson Adam Danielson Amit Munshi Amit Munshi Arthur Onno Arthur Onno Willam Weigand Willam Weigand Annas Kindvall Annas Kindvall Carey Reich Carey Reich Zhengshan Yu Zhengshan Yu Jianwei Shi Jianwei Shi Darius Kuciauskas Darius Kuciauskas Ali Abbas Ali Abbas Michael Walls Michael Walls Zachary Holman Zachary Holman Walajabad S Sampath Walajabad S Sampath Sputtered aluminum oxide and p+ amorphous silicon back-contact for improved hole extraction in polycrystalline CdSexTe1-x and CdTe photovoltaics Loughborough University 2020 CdTe Al2O3 a-Si passivating oxides photovoltaic cells charge carrier lifetime 2020-01-24 14:13:21 Conference contribution https://repository.lboro.ac.uk/articles/conference_contribution/Sputtered_aluminum_oxide_and_p_amorphous_silicon_back-contact_for_improved_hole_extraction_in_polycrystalline_CdSexTe1-x_and_CdTe_photovoltaics/11673570 A thin layer of Al2O3 at the back of CdSexTe1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al2O3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al2O3, amorphous silicon (a-Si), and indiumdoped tin oxide (ITO) layers, as well as their interaction with the CdCl2 passivation process, are necessary to translate these electrooptical improvements into gains in voltage