2134/11673570.v1
Adam Danielson
Adam
Danielson
Amit Munshi
Amit
Munshi
Arthur Onno
Arthur
Onno
Willam Weigand
Willam
Weigand
Annas Kindvall
Annas
Kindvall
Carey Reich
Carey
Reich
Zhengshan Yu
Zhengshan
Yu
Jianwei Shi
Jianwei
Shi
Darius Kuciauskas
Darius
Kuciauskas
Ali Abbas
Ali
Abbas
Michael Walls
Michael
Walls
Zachary Holman
Zachary
Holman
Walajabad S Sampath
Walajabad S
Sampath
Sputtered aluminum oxide and p+ amorphous silicon back-contact for improved hole extraction in polycrystalline CdSexTe1-x and CdTe photovoltaics
Loughborough University
2020
CdTe
Al2O3
a-Si
passivating oxides
photovoltaic cells
charge carrier lifetime
2020-01-24 14:13:21
Conference contribution
https://repository.lboro.ac.uk/articles/conference_contribution/Sputtered_aluminum_oxide_and_p_amorphous_silicon_back-contact_for_improved_hole_extraction_in_polycrystalline_CdSexTe1-x_and_CdTe_photovoltaics/11673570
A thin layer of Al2O3 at the back of CdSexTe1-x/CdTe
devices is shown to passivate the back interface and drastically
improve surface recombination lifetimes and photoluminescent
response. Despite this, such devices do not show an improvement
in open-circuit voltage (VOC.) Adding a p
+
amorphous silicon layer
behind the Al2O3 bends the conduction band upward, reducing the
barrier to hole extraction and improving collection. Further
optimization of the Al2O3, amorphous silicon (a-Si), and indiumdoped tin oxide (ITO) layers, as well as their interaction with the
CdCl2 passivation process, are necessary to translate these electrooptical improvements into gains in voltage