2134/12435434.v1
Ka-Wai Yeung
Ka-Wai
Yeung
Yuqing Dong
Yuqing
Dong
Ling Chen
Ling
Chen
Chak-Yin Tang
Chak-Yin
Tang
Wing-Cheung Law
Wing-Cheung
Law
Gary Chi-Pong Tsui
Gary Chi-Pong
Tsui
Daniel Engstrom
Daniel
Engstrom
Printability of photo-sensitive nanocomposites using two-photon polymerization
Loughborough University
2020
Uncategorised value
two-photon polymerization
direct laser writing
3D nanofabrication
photothermal nanomaterials
2020-06-08 09:07:57
Journal contribution
https://repository.lboro.ac.uk/articles/journal_contribution/Printability_of_photo-sensitive_nanocomposites_using_two-photon_polymerization/12435434
AbstractTwo-photon polymerization direct laser writing (TPP DLW) is an emerging technology
for producing advanced functional devices with complex three-dimensional (3D)
micro-structures. Tremendous efforts have been devoted to developing two-photon
polymerizable photo-sensitive nanocomposites with tailored properties. Light-induced
reconfigurable smart materials such as liquid crystalline elastomers (LCEs) are
promising materials. However, due to the difficulties in designing two-photon
polymerizable liquid crystal monomer (LCM) nanocomposite photoresists, it is
challenging to fabricate true 3D LCE micro-structures. In this paper, we report the
preparation of photo-sensitive LCE nanocomposites containing photothermal
nanomaterials, including multiwalled carbon nanotubes, graphene oxide and gold
nanorods (AuNRs), for TPP DLW. The printability of the LCE nanocomposites is assessed
by the fidelity of the micro-structures under different laser writing conditions. DLW
of GO/LCM photoresist has shown a vigorous bubble formation. This may be due to the
excessive heat generation upon rapid energy absorption of 780 nm laser energy.
Compared to pure LCM photoresists, AuNR/LCM photoresists have a lower laser intensity
threshold and higher critical laser scanning speed, due to the high absorption of
AuNRs at 780 nm, which enhanced the photo-sensitivity of the photoresist.
Therefore, a shorter printing time can be achieved for the AuNR/LCM photoresist.