Variation of Cu content of sprayed Cu(In,Ga)(S,Se)2 solar cells based on a Thiol-Amine solvent mixture
Panagiota Arnou
Sona Ulicna
Alexander Eeles
Mustafa Togay
Lewis Wright
Andrei Malkov
Michael Walls
Jake Bowers
2134/26135
https://repository.lboro.ac.uk/articles/conference_contribution/Variation_of_Cu_content_of_sprayed_Cu_In_Ga_S_Se_2_solar_cells_based_on_a_Thiol-Amine_solvent_mixture/9389324
Cu(In,Ga)(S,Se)2
(CIGS) thin films were formed by
a low cost solution-based approach using metal sulfide
precursors. The stoichiometry of the absorber layer is tailored in
order to improve film morphology and electrical properties.
Cuy
ln0.7Ga0.3Se2
films were prepared with a varied Cu content
(0.8>y>1.1) and were completed in solar cell devices. The
compositional, structural and electrical properties of the devices
were investigated. Increased Cu content improves lateral
crystallization, but results in the formation of Cu-rich secondary
phases in-between CIGS grain boundaries. Characterization of
the completed devices shows that Cu content has an important
effect on the device electrical properties and the dominant
recombination mechanisms.
2017-08-18 13:02:07
CIGS
Low cost
Solar cells
Solution processing
Stoichiometry