2134/27047 Christos Potamialis Christos Potamialis Fabiana Lisco Fabiana Lisco Bianca Maniscalco Bianca Maniscalco Mustafa Togay Mustafa Togay Ali Abbas Ali Abbas Martin Bliss Martin Bliss Jake Bowers Jake Bowers Michael Walls Michael Walls I. Rimmaudo I. Rimmaudo R. Mis Fernandez R. Mis Fernandez V. Rejon V. Rejon J.L. Pena J.L. Pena Photoluminescence imaging analysis of doping in thin film CdS and CdS/CdTe devices Loughborough University 2017 untagged Mechanical Engineering not elsewhere classified 2017-10-23 10:38:44 Conference contribution https://repository.lboro.ac.uk/articles/conference_contribution/Photoluminescence_imaging_analysis_of_doping_in_thin_film_CdS_and_CdS_CdTe_devices/9556364 The use of photoluminescence (PL) imaging analysis to assess the effectiveness of the passivation treatment due to the presence of chlorine in CdS thin films has been investigated. In this work, we show that the chlorine doping effect in the CdS window layer can be detected by PL imaging analysis, due to the formation of a defect complex of sulfur vacancy and ClS (VS-ClS) and complexes between halogen ions and cadmium vacancies (VCd-ClS). CdTe devices with differently doped CdS layers were investigated. PL imaging, TEM, IV performance indicators and EQE analysis were performed to understand the effect of the different dopants on the electrical performances of CdTe devices.