2134/27047
Christos Potamialis
Christos
Potamialis
Fabiana Lisco
Fabiana
Lisco
Bianca Maniscalco
Bianca
Maniscalco
Mustafa Togay
Mustafa
Togay
Ali Abbas
Ali
Abbas
Martin Bliss
Martin
Bliss
Jake Bowers
Jake
Bowers
Michael Walls
Michael
Walls
I. Rimmaudo
I.
Rimmaudo
R. Mis Fernandez
R. Mis
Fernandez
V. Rejon
V.
Rejon
J.L. Pena
J.L.
Pena
Photoluminescence imaging analysis of doping in thin film CdS and CdS/CdTe devices
Loughborough University
2017
untagged
Mechanical Engineering not elsewhere classified
2017-10-23 10:38:44
Conference contribution
https://repository.lboro.ac.uk/articles/conference_contribution/Photoluminescence_imaging_analysis_of_doping_in_thin_film_CdS_and_CdS_CdTe_devices/9556364
The use of photoluminescence (PL) imaging analysis to assess the effectiveness of the passivation treatment due to the presence of chlorine in CdS thin films has been investigated. In this work, we show that the chlorine doping effect in the CdS window layer can be detected by PL imaging analysis, due to the formation of a defect complex of sulfur vacancy and ClS (VS-ClS) and complexes between halogen ions and cadmium vacancies (VCd-ClS). CdTe devices with differently doped CdS layers were investigated. PL imaging, TEM, IV performance indicators and EQE analysis were performed to understand the effect of the different dopants on the electrical performances of CdTe devices.