%0 DATA
%A Vincent M., Dwyer
%D 2009
%T Modeling the electromigration failure time distribution in short copper interconnects
%U https://repository.lboro.ac.uk/articles/Modeling_the_electromigration_failure_time_distribution_in_short_copper_interconnects/9560006
%2 https://repository.lboro.ac.uk/ndownloader/files/17192102
%K untagged
%X The electromigration EM lifetime in short copper interconnects is modeled using a previously
developed means of generating realistic interconnect microstructures combined with the
one-dimensional stress evolution equation of Korhonen et al. J. Appl. Phys. 73, 3790 1993 . This
initial analysis describes the void nucleation and subsequent growth in lines blocked at one end and
terminated with a pad at the other. For short copper interconnects, the failure time is largely spent
on void growth, and, for sufficiently short lines (≤ 50 mm), the growth is largely steady state. This
allows for the development of a simple expression for the variation of the failure time with
microstructure. Assuming that the diffusion activation energies are normally distributed, the
permanence property of summed lognormals leads to a roughly lognormal distribution for EM
failure times. Importantly for EM design rules, linear extrapolation on lognormal plot is found to
slightly underestimate interconnect reliability.