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Competing surface reactions limiting the performance of ion-sensitive field-effect transistors

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journal contribution
posted on 2017-06-16, 13:55 authored by Ralph L. Stoop, Mathias Wipf, Steffen Muller, Kristine Bedner, Iain Wright, Colin J. Martin, Edwin C. Constable, Wangyang Fu, Alexey Tarasov, Michel Calame, Christian Schonenberger
© 2015 Elsevier B.V. All rights reserved.Ion-sensitive field-effect transistors based on silicon nanowires are promising candidates for the detection of chemical and biochemical species. These devices have been established as pH sensors thanks to the large number of surface hydroxyl groups at the gate dielectrics which makes them intrinsically sensitive to protons. To specifically detect species other than protons, the sensor surface needs to be modified. However, the remaining hydroxyl groups after functionalization may still limit the sensor response to the targeted species. Here, we describe the influence of competing reactions on the measured response using a general site-binding model. We investigate the key features of the model with a real sensing example based on gold-coated nanoribbons functionalized with a self-assembled monolayer of calcium-sensitive molecules. We identify the residual pH response as the key parameter limiting the sensor response. The competing effect of pH or any other relevant reaction at the sensor surface has therefore to be included to quantitatively understand the sensor response and prevent misleading interpretations.

Funding

The authors gratefully acknowledge the support by the Swiss Nanoscience Institute (SNI), the Swiss Nano-Tera program, the European Commission under the FP7-NMP project Hysens (263091), the European Comission under the FP7-ICT project Symone (105244) and the Swiss National Science Foundation as part of the NCCR Molecular Systems Engineering

History

School

  • Science

Department

  • Chemistry

Published in

Sensors and Actuators, B: Chemical

Volume

220

Pages

500 - 507

Citation

STOOP, R.L. ...et al., 2015. Competing surface reactions limiting the performance of ion-sensitive field-effect transistors. Sensors and Actuators, B: Chemical, 220, pp. 500-507.

Publisher

© Elsevier

Version

  • AM (Accepted Manuscript)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/

Publication date

2015

Notes

This paper was accepted for publication in the journal Sensors and Actuators, B: Chemical and the definitive published version is available at http://dx.doi.org/10.1016/j.snb.2015.05.096

ISSN

0925-4005

Language

  • en