Yu2019_Article_CurrentUnderstandingAndApplica.pdf (1.08 MB)
Current understanding and applications of the cold sintering process
journal contribution
posted on 2019-03-06, 12:04 authored by Tong Yu, Jiang Cheng, Lu Li, Benshuang Sun, Xujin BaoXujin Bao, Hongtao ZhangHongtao ZhangIn traditional ceramic processing techniques, high sintering temperature is necessary to achieve fully dense microstructures. But it can cause various problems including warpage, overfiring, element evaporation, and polymorphic transformation. To overcome these drawbacks, a novel processing technique called “cold sintering process (CSP)” has been explored by Randall et al. CSP enables densification of ceramics at ultra-low temperature (≤ 300 °C) with the assistance of transient aqueous solution and applied pressure. In CSP, the processing conditions including aqueous solution, pressure, temperature, and sintering duration play critical roles in the densification and properties of ceramics, which will be reviewed. The review will also include the applications of CSP in solid-state rechargeable batteries. Finally, the perspectives about CSP is proposed.
Funding
Loughborough – China Materials Partnership Scholarship provided by Department of Materials, Loughborough University.
History
School
- Aeronautical, Automotive, Chemical and Materials Engineering
Department
- Materials
Published in
Frontiers of Chemical Science and EngineeringVolume
13Pages
654–664Citation
YU, T. … et al, 2019. Current understanding and applications of the cold sintering process. Frontiers of Chemical Science and Engineering, doi:10.1007/s11705-019-1832-1.Publisher
Springer and Higher Education PressVersion
- VoR (Version of Record)
Rights holder
© The AuthorsPublisher statement
This is a post-peer-review, pre-copyedit version of an article published in Frontiers of Chemical Science and Engineering. The final authenticated version is available online at: https://doi.org/10.1007/s11705-019-1832-1Acceptance date
2019-02-21Publication date
2019-10-18Copyright date
2019ISSN
2095-0179eISSN
2095-0187Publisher version
Language
- en