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Development of CO 2 snow cleaning for in situ cleaning of µ CMM stylus tips

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journal contribution
posted on 25.01.2017, 09:21 by Xiaobing Feng, Peter Kinnell, Simon Lawes
Contamination adhered to the surface of a µCMM stylus tip compromises the measurement accuracy of the µCMM system, potentially causing dimensional errors that are over ten times larger than the uncertainty of a modern µCMM. In prior work by the authors, the use of a high pressure CO2 gas stream was demonstrated to achieve significant cleaning rate for a range of contaminant without damage to the stylus tip surface. This paper explores the practical challenges of achieving effective stylus tip cleaning in situ on µCMM systems. Two types of snow cleaning approaches were evaluated for their coverage of cleaning, thermal impact and gas flow forces. This work then presents a novel multi-nozzle prototype system using pulsed snow streams to achieve cleaning coverage over the entire stylus tip, and balances forces from the snow streams reducing drag force imparted by the gas stream to levels comparable to the probing force of µCMMs, as well as allowing automated cleaning procedure integrated into a µCMM system.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

Measurement Science and Technology

Volume

28

Issue

1

Pages

015007 - 015007

Citation

FENG, X., KINNELL, P. and LAWES, S., 2017. Development of CO 2 snow cleaning for in situ cleaning of µ CMM stylus tips. Measurement Science and Technology, 28(1): 015007.

Publisher

© IOP Publishing

Version

AM (Accepted Manuscript)

Acceptance date

03/11/2016

Publication date

2017

Notes

This is an author-created, un-copyedited version of an article published in Measurement Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/1361-6501/28/1/015007.

ISSN

0957-0233

eISSN

1361-6501

Language

en

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