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Electromigration voiding in nanoindented, single crystal Al lines
journal contribution
posted on 2009-07-14, 11:17 authored by Vincent Dwyer, W.S. Wan IsmailWe consider the interpretation of some theoretical and experimental work regarding
electromigration voiding in nanoindented, single crystal aluminum lines. A recently suggested
voiding criterion of a critical accumulated flux divergence is found, in fact, to be identical to the
widely accepted critical stress criterion. The inclusion of the stress dependence of the atomic
diffusion coefficient is shown to be vital when the steady state is characterized by J ≠ 0, such as in
the case of a void growing at a constant rate. It is found, for example, that the stress required for
steady void growth, within single crystal Al lines, is probably significantly smaller than previously suggested.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Citation
DWYER, V.M. and WAN ISMAIL, W.S., 2001. Electromigration voiding in nanoindented, single crystal Al lines. Journal of Applied Physics, 89 (5), pp. 3064-3066Publisher
© American Institute of Physics.Version
- VoR (Version of Record)
Publication date
2001Notes
This article was published in the serial, Journal of Applied Physics [© American Institute of Physics]. It is also available at: http://dx.doi.org/10.1063/1.1342436ISSN
0021-8979Language
- en