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Electronic properties of solution-processed Cu(In,Ga)(S,Se)2 solar cells using metal chalcogenides and amine-thiol solvent mixtures

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conference contribution
posted on 08.01.2019 by Sona Ulicna, Mustafa Togay, Martin Bliss, Vincent Tsai, Lewis Wright, Jamie Lowe, Andrei Malkov, Michael Walls, Jake Bowers
This work examines the effects of post-deposition air-annealing on the electronic properties of solution-processed heterojunction CIGS solar cells. The annealing in air of the CIGS/CdS interface was found to have positive effects on the device performance with an increase in all PV parameters even after annealing times as short as 5 min. A VOC increase of <; 130 mV was caused by the reduced surface and grain boundary recombination through passivation of surface Se deficiencies with oxygen atoms. Prolonged annealing causes charge redistribution and diffusion of mobile elements such as Cu and Cd deeper into the absorber bulk however, resulting in lower carrier density and deeper defects with increased annealing time. These were observed through capacitance-voltage profiling and admittance spectroscopy.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

Citation

ULICNA, S. ... et al. 2018. Electronic properties of solution-processed Cu(In,Ga)(S,Se)2 solar cells using metal chalcogenides and amine-thiol solvent mixtures. Presented at the 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Waikoloa, Hawaii, USA, 10-15 June 2018, pp.859-864.

Publisher

© IEEE

Version

AM (Accepted Manuscript)

Acceptance date

01/12/2018

Publication date

2018

Notes

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

ISBN

9781538685297

Language

en

Location

Waikoloa, Hawaii, USA

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