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Erratum: "The role of defects in the electrical properties of NbO2 thin film vertical devices" [AIP Advances 6, 125006 (2016)]

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posted on 11.10.2017 by Toyanath Joshi, Pavel Borisov, David Lederman
We noticed that Figures 1, 2, and 4(a) in the original publication were of poor quality due to formatting issues. This erratum provides corrected versions of those figures. The original results and discussions were not affected. RHEED images in the inset to the Fig. 1 are now fully visible. Figure 2 shows now properly fitted frames for the AFM image with the correctly placed height scales. Figure 4(a) shows now a correctly presented block diagram for the effective measurement circuit.

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  • Science

Department

  • Physics

Published in

AIP Advances

Volume

7

Issue

1

Citation

JOSHI, T., BORISOV, P. and LEDERMAN, D., 2017. Erratum: "The role of defects in the electrical properties of NbO2 thin film vertical devices" [AIP Advances 6, 125006 (2016)]. AIP Advances, 7 (1), 019901.

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AIP Publishing © Author(s)

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VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution 4.0 International (CC BY 4.0) licence. Full details of this licence are available at: http://creativecommons.org/licenses/ by/4.0/

Acceptance date

05/01/2017

Publication date

2017-01-18

Notes

This is an Open Access Article. It is published by AIP Publishing under the Creative Commons Attribution 4.0 International Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/4.0/

eISSN

2158-3226

Language

en

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