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Exploring metastable defect behavior in solution-processed antimony doped CIGS thin film solar cells

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conference contribution
posted on 13.12.2018 by Mustafa Togay, Sona Ulicna, Syeda Bukhari, Fabiana Lisco, Martin Bliss, Alex Eeles, Michael Walls, Jake Bowers
This study investigates the metastable defect behavior from temperature dependent current density-voltage (JVT) and capacitance spectroscopy measurements in solutionprocessed antimony (Sb) doped CIGS thin film solar cells. From the Voc(T) analysis, the main recombination mechanism is found to be Schottky-Read-Hall recombination in the bulk. A detailed study of the carrier concentration, defect density and energy level defects was performed using capacitance spectroscopy. Admittance spectroscopy measurements revealed an admittance step at low temperatures with an activation energy of 42 meV.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

7th World Conference on Photovoltaic Energy Conversion (WCPEC-7)

Citation

TOGAY, M. ... et al., Exploring metastable defect behavior in solution-processed antimony doped CIGS thin film solar cells. Presented at the IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Waikoloa, Hawaii, US, 10-15 Jun, pp. 1960-1965.

Publisher

© IEEE

Version

AM (Accepted Manuscript)

Publication date

2018

Notes

Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

ISBN

9781538685297

ISSN

0160-8371

Language

en

Location

Waikoloa, Hawaii, US

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