Exploring metastable defect behavior in solution-processed antimony doped CIGS thin film solar cells
conference contributionposted on 13.12.2018 by Mustafa Togay, Sona Ulicna, Syeda Bukhari, Fabiana Lisco, Martin Bliss, Alex Eeles, Michael Walls, Jake Bowers
Any type of content contributed to an academic conference, such as papers, presentations, lectures or proceedings.
This study investigates the metastable defect behavior from temperature dependent current density-voltage (JVT) and capacitance spectroscopy measurements in solutionprocessed antimony (Sb) doped CIGS thin film solar cells. From the Voc(T) analysis, the main recombination mechanism is found to be Schottky-Read-Hall recombination in the bulk. A detailed study of the carrier concentration, defect density and energy level defects was performed using capacitance spectroscopy. Admittance spectroscopy measurements revealed an admittance step at low temperatures with an activation energy of 42 meV.
- Mechanical, Electrical and Manufacturing Engineering