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PVSC 46 Conference Manuscript Liam Welch.pdf (747.57 kB)

Extrinsic doping of amine-thiol solution-processed Cu(In,Ga)(S,Se)2 thin film photovoltaics

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conference contribution
posted on 2020-01-10, 09:55 authored by Liam Welch, Sona Ulicna, Mustafa Togay, Vincent Tsai, Andrei MalkovAndrei Malkov, Tom BettsTom Betts, Michael WallsMichael Walls, Jake BowersJake Bowers
Na post-deposition treatments are commonly used to tackle the fine grained layers that are prevalent in solutiongrown CIGS absorber layers. This work studies the effect of an evaporated NaCl layer on the electrical and morphological properties of amine-thiol solution-processed CIGS solar cells. Here, the NaCl layer acts as a post-deposition Na source and its application resulted in a CIGS device with superior JV characteristics, including a power conversion efficiency increase from 1.3% for a Na free glass substrate to 8.4 % with NaCl post deposition treatment.

Funding

Low Cost Solution Processed CIGS Solar Cells

History

School

  • Mechanical, Electrical and Manufacturing Engineering
  • Science

Department

  • Chemistry

Research Unit

  • Centre for Renewable Energy Systems Technology (CREST)

Published in

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Pages

1867 - 1871

Source

46th IEEE Photovoltaic Specialists Conference (PVSC-46)

Publisher

IEEE

Version

  • AM (Accepted Manuscript)

Rights holder

© IEEE

Publisher statement

Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Acceptance date

2019-06-21

Publication date

2020-02-06

Copyright date

2019

ISBN

9781728104942

ISSN

0160-8371

Language

  • en

Location

Chicago, IL

Event dates

16th June 2019 - 21st June 2019

Depositor

Mr Liam Welch Deposit date: 9 January 2020

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