Magnesium-doped zinc oxide as a high resistance transparent layer for thin film CdS/CdTe solar cells

Magnesium-doped Zinc Oxide (MZO) was used as an alternative high resistance transparent layer for CdS/CdTe thin film solar cells. Thin films of MZO were deposited by RF magnetron sputtering and deposited on an Indium Tin Oxide contact (ITO). Thin film CdTe devices including a MZO high resistance transparent layer deposited at above 300◦C yielded a mean efficiency exceeding 10.5 %. This compares with an efficiency of 8.2 % without the MZO layer. The improvement in efficiency was due to a higher open circuit voltage and fill factor. Lowering the deposition temperature of MZO reduced the performance of the devices.