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Nanoscale investigation of deformation characteristics in a polycrystalline silicon carbide

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journal contribution
posted on 22.10.2019 by Dezhou Zhang, Liguo Zhao, Anish Roy, Yu-Lung Chiu
In this paper, we study the mechanical behaviour of silicon carbide at the nanoscale, with a focus on the effects of grain orientation and high-dose irradiation. Grain orientation effect was studied through nanoindentation with the aid of scanning electron microscopy (SEM) and EBSD (electron backscatter diffraction) analyses. Mechanical properties such as hardness, elastic modulus and fracture toughness were assessed for different grain orientations. Increased plasticity and fracture toughness were observed during indentations on crystallographic planes which favour dislocation movement. In addition, for SiC subjected to irradiation, increases in hardness and embrittlement were observed in nanoindentations at lower imposed loads, whereas a decrease in hardness and an increase in toughness were obtained in nanoindentations at higher loads. Transmission electron microscopy (TEM) analyses revealed that the mechanical response observed at a shallow indentation depth was due to Ga ion implantation, which hardened and embrittled the surface layer of the material. With an increased indentation depth, irradiationinduced amorphization led to a decrease in hardness and an increase in fracture toughness of the material.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

Journal of the Australian Ceramic Society

Volume

56

Pages

951–967

Publisher

Springer

Version

VoR (Version of Record)

Rights holder

© The Authors

Publisher statement

This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Acceptance date

21/10/2019

Publication date

2019-12-01

Copyright date

2020

ISSN

2510-1560

eISSN

2510-1579

Language

en

Depositor

Prof Liguo Zhao. Deposit date: 21 October 2019

Licence

Exports