PhysRevLett.124.087701.pdf (660.62 kB)
Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain
journal contribution
posted on 2020-01-27, 11:23 authored by Kristien Villegas, Feodor Kusmartsev, Yi Luo, Ivan SavenkoWe propose a new type of optical transistor for a broadband amplification of THz radiation. It is
made of a graphene–superconductor hybrid, where electrons and Cooper pairs couple by Coulomb
forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin
of amplification is the quantum capacitance of graphene. It leads to THz waves amplification, the
negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like
an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole
spectrum of chaotic signals (or noise), that is required for numerous biological applications.
Funding
Institute for Basic Science in Korea (Project No. IBS-R024-D1) and the grant RFBR 18-29-20033 mk.
History
School
- Science
Department
- Physics
Published in
Physical Review LettersVolume
124Issue
8Publisher
American Physical SocietyVersion
- VoR (Version of Record)
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© American Physical SocietyPublisher statement
This paper was published in the journal Physical Review Letters and is available at https://doi.org/10.1103/PhysRevLett.124.087701.Acceptance date
2020-01-23Publication date
2020-02-26Copyright date
2020ISSN
0031-9007eISSN
1079-7114Publisher version
Language
- en
Depositor
Prof Fedor Kusmartsev . Deposit date: 24 January 2020Article number
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