Optimisation of Co2MnSi thin films and ANE

Characterisation of Co2MnSi thin films and corresponding ANE measurements.

Origin dataset associated with article: Anomalous Nernst Effect in Co2MnSi Thin Films

Abstract
Separation of the anomalous Nernst and spin Seebeck voltages in bilayer devices is often problematic when both layers are metallic, and the anomalous Nernst effect becomes non-negligible. Co2MnSi, a strong candidate for the spin generator in spin Seebeck devices, is a predicted half-metal with 100% spin polarisation at the Fermi energy, however, typically B2 or L21 order is needed to achieve this. We demonstrate the optimisation of thin film growth of Co2MnSi on glass, where choice of deposition and annealing temperature can promote various ordered states. The contribution from the anomalous Nernst Effect (ANE) is then investigated to inform future measurements of the spin Seebeck. A maximum ANE coefficient of 0.662μV/K is found for an A2 disordered polycrystalline Co2MnSi film. This value is comparable to ordered Heusler thin films deposited on to single crystal substrates but obtained at a far lower fabrication temperature and material cost.