Passivation of silicon wafers by Silicon Carbide (SiCx) thin film grown by sputtering
2015-05-26T08:31:49Z (GMT) by
Silicon Carbide films for silicon solar cell application were deposited by means of RF sputtering process. Films were deposited from mixed Silicon – Graphite target onto silicon Cz <100> wafers. Samples were characterized by Photo Conductance Decay (PCD) method to measure the effective lifetime. The thickness and refractive index of the films deposited were measured using a spectroscopic Ellipsometer. X-Ray Diffraction (XRD) was performed to measure the crystallinity of the samples. Results have indicated that the deposited films were mainly amorphous. The crystalline fraction was present in samples with a better passivation level. Results from PCD show that the effective lifetime improved up to 38 μs which corresponds to a Voc=641 mV. Deposition rates up to 30 nm/min were obtained for samples at 0.9 kW bias power.