Photoluminescence imaging analysis of doping in thin film CdS and CdSCdTe devices .pdf (316.95 kB)
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Photoluminescence imaging analysis of doping in thin film CdS and CdS/CdTe devices

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conference contribution
posted on 23.10.2017 by Christos Potamialis, Fabiana Lisco, Bianca Maniscalco, Mustafa Togay, Ali Abbas, Martin Bliss, Jake Bowers, Michael Walls, I. Rimmaudo, R. Mis Fernandez, V. Rejon, J.L. Pena
The use of photoluminescence (PL) imaging analysis to assess the effectiveness of the passivation treatment due to the presence of chlorine in CdS thin films has been investigated. In this work, we show that the chlorine doping effect in the CdS window layer can be detected by PL imaging analysis, due to the formation of a defect complex of sulfur vacancy and ClS (VS-ClS) and complexes between halogen ions and cadmium vacancies (VCd-ClS). CdTe devices with differently doped CdS layers were investigated. PL imaging, TEM, IV performance indicators and EQE analysis were performed to understand the effect of the different dopants on the electrical performances of CdTe devices.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

44th IEEE Photovoltaic Specialist Conference

Citation

POTAMIALIS, C. ...et al., 2017. Photoluminescence imaging analysis of doping in thin film CdS and CdS/CdTe devices. Presented at the 2017 IEEE 44th. Photovoltaic Specialists Conference (PVSC), Washington, D.C., June 25-30th, pp. 2457-2461.

Publisher

IEEE

Version

AM (Accepted Manuscript)

Acceptance date

23/06/2017

Publication date

2017

Notes

Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

ISBN

9781509056057

Language

en

Location

Washington DC

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