Polycrystalline CdSeTe CdTe Absorber Cells with 28 mA cm2 Short-Circuit Current.pdf (681.39 kB)
Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm2 Short-Circuit Current
journal contribution
posted on 2018-03-12, 14:20 authored by Amit Munshi, Jason M. Kephart, Ali AbbasAli Abbas, John Raguse, Jean-Nicolas Beaudry, Kurt L. Barth, James Sites, Michael WallsMichael Walls, Walajabad S. SampathIEEE An 800 nm CdSeTe layer was added to the CdTe absorber used in high-efficiency CdTe cells to increase the current and produce an increase in efficiency. The CdSeTe layer employed had a band-gap near 1.41 eV, compared with 1.5 eV for CdTe. This lower band-gap enabled a current density increase from approximately 26 to over 28 mA & #x002F;cm2. The open-circuit voltage obtained in the high-efficiency CdTe-only device was maintained and the fill-factor remained close to 80 & #x0025;. Improving the short-circuit current density and maintaining the open-circuit voltage lead to device efficiency over 19 & #x0025;. External quantum efficiency implied that about half the current was generated in the CdSeTe layer and half in the CdTe. Cross-sectional STEM and EDS showed good grain structure throughout. Diffusion of Se into the CdTe layer was observed. This is the highest efficiency polycrystalline CdTe photovoltaic device demonstrated by a university or national laboratory.
Funding
The CSU authors thank support from NSF’s Accelerating Innovation Research, DOE’s SunShot and NSF’s Industry/University Cooperative Research Center programs. The Loughborough authors are grateful to EPSRC for funding through the Supergen SuperSolar Hub.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
IEEE Journal of PhotovoltaicsVolume
8Issue
1Pages
310 - 314Citation
MUNSHI, A. ...et al., 2018. Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm2 Short-Circuit Current. IEEE Journal of Photovoltaics, 8(1), pp. 310-314.Publisher
© IEEEVersion
- AM (Accepted Manuscript)
Acceptance date
2017-12-07Publication date
2017-12-07Notes
Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.ISSN
2156-3381Publisher version
Language
- en