Power handling of a photoconductive microwave switch
2017-03-07T13:46:38Z (GMT) by
The power handling performance of a photoconductive microwave switch up to an RF input power of 44dBm (25W) is presented. The switch consists of a lightly doped die of silicon mounted over a gap in a transmission line. A 2GHz signal is applied through the switch and the 1dB compression point is analysed.