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Sputtered aluminum oxide and p+ amorphous silicon back-contact for improved hole extraction in polycrystalline CdSexTe1-x and CdTe photovoltaics

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conference contribution
posted on 24.01.2020 by Adam Danielson, Amit Munshi, Arthur Onno, Willam Weigand, Annas Kindvall, Carey Reich, Zhengshan Yu, Jianwei Shi, Darius Kuciauskas, Ali Abbas, Michael Walls, Zachary Holman, Walajabad S Sampath
A thin layer of Al2O3 at the back of CdSexTe1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al2O3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al2O3, amorphous silicon (a-Si), and indiumdoped tin oxide (ITO) layers, as well as their interaction with the CdCl2 passivation process, are necessary to translate these electrooptical improvements into gains in voltage

Funding

Solar Energy Technologies Office (SETO) Agreement Number DE-EE0008552

SIPS Agreement Number DE-EE0008177

U.S. Department of Energy under Contract No. DE-AC36-08- GO28308 with the National Renewable Energy Laboratory

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Pages

3018 - 3023

Source

46th IEEE Photovoltaics Specialist Conference (PVSC)

Publisher

IEEE

Version

AM (Accepted Manuscript)

Rights holder

© IEEE

Publisher statement

Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Acceptance date

21/06/2019

Publication date

2020-02-06

Copyright date

2019

ISBN

9781728104942

ISSN

0160-8371

Language

en

Location

Chicago, IL

Event dates

17th June 2019 - 21st June 2019

Depositor

Dr Ali Abbas x. Deposit date: 21 January 2020

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