Sputtered aluminum oxide and p+ amorphous silicon back-contact for improved hole extraction in polycrystalline CdSexTe1-x and CdTe photovoltaics
conference contributionposted on 24.01.2020 by Adam Danielson, Amit Munshi, Arthur Onno, Willam Weigand, Annas Kindvall, Carey Reich, Zhengshan Yu, Jianwei Shi, Darius Kuciauskas, Ali Abbas, Michael Walls, Zachary Holman, Walajabad S Sampath
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A thin layer of Al2O3 at the back of CdSexTe1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al2O3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al2O3, amorphous silicon (a-Si), and indiumdoped tin oxide (ITO) layers, as well as their interaction with the CdCl2 passivation process, are necessary to translate these electrooptical improvements into gains in voltage
Solar Energy Technologies Office (SETO) Agreement Number DE-EE0008552
SIPS Agreement Number DE-EE0008177
U.S. Department of Energy under Contract No. DE-AC36-08- GO28308 with the National Renewable Energy Laboratory
- Mechanical, Electrical and Manufacturing Engineering