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The energetic impact of small CdxTey clusters on Cadmium Telluride
Cadmium Telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to do research on how these defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. Single deposition tests have been performed, to study the behaviour of deposited clusters under different conditions. We deposit a CdxTey (x,y = 0,1) cluster onto the (100) and (111) Cd and Te terminated surfaces with energies ranging from 1 to 40 eV. More than 1000 simulations have been performed for each of these cases so as to sample the possible deposition positions and to collect sufficient statistics. The results show that Cd atoms are more readily sputtered from the surface than Te atoms and the sticking probability is higher on Te terminated surfaces than Cd terminated surfaces. They also show that increasing the deposition energy typically leads to an increase in the number of atoms sputtered from the system and tends to decrease the number of atoms that sit on or in the surface layer, whilst increasing the number of interstitials observed.
History
School
- Aeronautical, Automotive, Chemical and Materials Engineering
Department
- Materials
Published in
THIN SOLID FILMSVolume
584Pages
41 - 45 (5)Citation
YU, M. and KENNY, S.D., 2015. The energetic impact of small CdxTey clusters on Cadmium Telluride. Thin Solid Films, 584, pp. 41 - 45.Publisher
© ElsevierVersion
- AM (Accepted Manuscript)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/Publication date
2015Notes
This paper was accepted for publication in the journal Thin Solid Films [© Elsevier]. The definitive version is available at: http://dx.doi.org/10.1016/j.tsf.2014.12.019ISSN
0040-6090Publisher version
Language
- en