Effects of lateral resistances in photovoltaic cells and full 2-D parameter extraction for the spatially-resolved models using electroluminescence images
conference contributionposted on 09.06.2015 by Xiaofeng Wu, Martin Bliss, Tom Betts, Ralph Gottschalg
Any type of content contributed to an academic conference, such as papers, presentations, lectures or proceedings.
This paper investigates the influences of the lateral resistances in photovoltaic (PV) devices, and proposes a method for extracting local electrical parameters of thin-film PV devices based on a 2-D spatially-resolved model utilising electroluminescence (EL) images and 2-D fittings. PV-oriented nodal analysis (PVONA) is used for studying the electrical properties of the devices and for simulations in iterative 2-D fitting processes. It is shown that the effects of the lateral resistances should not be simply replaced by lumped effective resistances. The proposed new method employs firstly the dark-I-V fitting for the junction parameters; and secondly 2-D fitting of EL images taken under varying bias levels, for the internal and lateral series resistances. The method is verified by a case study and demonstrates excellent agreements with measurement data.
- Mechanical, Electrical and Manufacturing Engineering
- Centre for Renewable Energy Systems Technology (CREST)