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Energy production of single junction amorphous silicon modules with varying i-Layer thickness

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conference contribution
posted on 31.07.2009, 13:16 by Pongpan Vorasayan, Tom Betts, Ralph Gottschalg, A.N. Tiwari
The energy production of a number of single junction amorphous silicon (a-Si) solar modules with different intrinsic layer thicknesses is investigated. This has been carried out through both indoor measurement and real operating condition monitoring outdoors. After 13 months of light exposure, the fully degraded and seasonally annealed states, can be seen. The results indicate that the thinnest devices do not necessarily have the lowest degradation. The thicker devices which have higher initial efficiency, however do suffer greater efficiency degradation. Experiment also shows that energy production does not follow the initial Standard Test Condition (STC) rated efficiency as the highest can be seen in thinner modules, which initially have much lower efficiencies.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Research Unit

  • Centre for Renewable Energy Systems Technology (CREST)

Citation

VORASAYAN, P. ... et al, 2005. Energy production of single junction amorphous silicon modules with varying i-Layer thickness. Proceedings of the 15th Photovoltaic Science & Engineering Conference, Shanghai, China, 13-15 October 2005.

Publisher

PVSEC

Version

AM (Accepted Manuscript)

Publication date

2005

Notes

This is a conference paper.

Language

en

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