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Magnesium-doped zinc oxide as a high resistance transparent layer for thin film CdS/CdTe solar cells

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conference contribution
posted on 23.10.2017 by Francesco Bittau, Elisa Artegiani, Ali Abbas, Daniele Menossi, Alessandro Romeo, Jake Bowers, Michael Walls
Magnesium-doped Zinc Oxide (MZO) was used as an alternative high resistance transparent layer for CdS/CdTe thin film solar cells. Thin films of MZO were deposited by RF magnetron sputtering and deposited on an Indium Tin Oxide contact (ITO). Thin film CdTe devices including a MZO high resistance transparent layer deposited at above 300◦C yielded a mean efficiency exceeding 10.5 %. This compares with an efficiency of 8.2 % without the MZO layer. The improvement in efficiency was due to a higher open circuit voltage and fill factor. Lowering the deposition temperature of MZO reduced the performance of the devices.

Funding

This work was supported by the Engineering and Physical Science Research Council (EPSRC) (EP/J017361/1) under the EPSRC Supergen SuperSolar Hub.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

2017 IEEE PVSEC

Citation

BITTAU, F. ...et al., 2017. Magnesium-doped zinc oxide as a high resistance transparent layer for thin film CdS/CdTe solar cells. Presented at the 2017 IEEE 44th. Photovoltaic Specialists Conference (PVSC), Washington, D.C., June 25-30th, pp. 752-756.

Publisher

IEEE

Version

AM (Accepted Manuscript)

Acceptance date

19/06/2017

Publication date

2017

Notes

Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

ISBN

9781509056057

Language

en

Location

Washington

Exports