Magnesium-doped zinc oxide as a high resistance transparent layer for thin film CdS/CdTe solar cells
conference contributionposted on 23.10.2017 by Francesco Bittau, Elisa Artegiani, Ali Abbas, Daniele Menossi, Alessandro Romeo, Jake Bowers, Michael Walls
Any type of content contributed to an academic conference, such as papers, presentations, lectures or proceedings.
Magnesium-doped Zinc Oxide (MZO) was used as an alternative high resistance transparent layer for CdS/CdTe thin film solar cells. Thin films of MZO were deposited by RF magnetron sputtering and deposited on an Indium Tin Oxide contact (ITO). Thin film CdTe devices including a MZO high resistance transparent layer deposited at above 300◦C yielded a mean efficiency exceeding 10.5 %. This compares with an efficiency of 8.2 % without the MZO layer. The improvement in efficiency was due to a higher open circuit voltage and fill factor. Lowering the deposition temperature of MZO reduced the performance of the devices.
This work was supported by the Engineering and Physical Science Research Council (EPSRC) (EP/J017361/1) under the EPSRC Supergen SuperSolar Hub.
- Mechanical, Electrical and Manufacturing Engineering