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Modelling spectral irradiation effects on single- and multijunction amorphous silicon photovoltaic devices

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conference contribution
posted on 15.03.2011 by Tom Betts, Ralph Gottschalg, David Infield
It has been previously reported that variations in the spectral irradiance under which an amorphous silicon device operates can have a significant effect on its elecbical performance. often contributing to enhanced system yields compared to crystalline-based systems. In this work, spectral irradiance data based on models and measurements taken at the Centre for Renewable Energy Systems Technology (CREST) in the UK are presented. These are input into electrical models for amorphous silicon devices incorporating different number of junctions in order to investigate the impact of changing spectral irradiation. The results can be classified broadly as primary effects. those accounting for the available spectrally useful irradiance and secondary effects that consider the effects of mismatched currents in the slacked cells of multi-junction devices. The modeled short circuit currents correlate well with measurements and are demonstrated as a useful tool for further investigation.
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School

  • Mechanical, Electrical and Manufacturing Engineering

Research Unit

  • Centre for Renewable Energy Systems Technology (CREST)

Citation

BETTS, T.R., GOTTSCHALG, R. and INFIELD, D., 2002. Modelling spectral irradiation effects on single- and multijunction amorphous silicon photovoltaic devices. IN: Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, New Orleans, May 19-24, pp. 1242-1245

Publisher

© IEEE

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VoR (Version of Record)

Publication date

2002

Notes

This is a conference paper [© IEEE]. It is also available at: http://ieeexplore.ieee.org/ Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

ISBN

0780374711

ISSN

1060-8371

Language

en

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