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Optimising I-V measurements of high capacitance modules using dark impedance measurements

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conference contribution
posted on 09.02.2017 by Alex Eeles, Ralph Gottschalg, Tom Betts
A method is demonstrated to optimise pulsed IV measurements of high capacitance PV modules, using dark IV and impedance measurements. The impact of capacitance during I-V measurements is minimised by changing the shape of the voltage ramp. The optimisation can be performed simply and automatically for each individual module during the charging period for the simulator. As an additional benefit of this method the extracted C-V profile can be used to estimate the minority carrier lifetime for the module. The system is demonstrated by using a high capacitance n type module, which is successfully measured in a single 10ms illumination pulse.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

IEEE Photovoltaic Specialists Conference Conference Record of the IEEE Photovoltaic Specialists Conference

Volume

2016-November

Pages

3693 - 3697

Citation

EELES, A., GOTTSCHALG, R. and BETTS, T.R., 2016. Optimising I-V measurements of high capacitance modules using dark impedance measurements. Presented at the IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, OR, USA, 5th-10th June 2016, pp. 3693-3697.

Publisher

© IEEE

Version

AM (Accepted Manuscript)

Acceptance date

19/08/2016

Publication date

2016

Notes

© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

ISBN

9781509056057

ISSN

0160-8371

Language

en

Location

uk

Exports