Performance of amorphous silicon in the initial, degraded and annealed states under varying spectrum, irradiance and temperature
conference contributionposted on 10.06.2015 by Martin Bliss, Jiang Zhu, Tom Betts, Ralph Gottschalg
Any type of content contributed to an academic conference, such as papers, presentations, lectures or proceedings.
This work analyses and discusses the performance of amorphous silicon (a-Si) single junction mini modules in three main states: in the initial non-degraded, as purchased state, in the degraded state after light-soaking and in the recovered state after thermal annealing. The experimental set-up and applied methods of controlled indoor light-soaking and thermal annealing are detailed. Device performance measurements are carried out indoors under varying spectrum (E), light intensity (G) and temperature (T). Measurement results have shown a reduction in STC power of up to 27.5% during the first 250h light soaking and a recovery of 56% of the performance losses after annealing for 250h at 80°C in the dark. After light soaking, devices also showed a reduction in low light performance and an increase in temperature coefficients, which to some extent reversed during the annealing process.
This work was supported by the Engineering and Physical Sciences Research Council (EPSRC) [grant EP/H040331/1].
- Mechanical, Electrical and Manufacturing Engineering