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Variation of Cu content of sprayed Cu(In,Ga)(S,Se)2 solar cells based on a Thiol-Amine solvent mixture

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conference contribution
posted on 18.08.2017, 13:02 by Panagiota Arnou, Sona Ulicna, Alexander Eeles, Mustafa Togay, Lewis Wright, Andrei Malkov, Michael Walls, Jake Bowers
Cu(In,Ga)(S,Se)2 (CIGS) thin films were formed by a low cost solution-based approach using metal sulfide precursors. The stoichiometry of the absorber layer is tailored in order to improve film morphology and electrical properties. Cuy ln0.7Ga0.3Se2 films were prepared with a varied Cu content (0.8>y>1.1) and were completed in solar cell devices. The compositional, structural and electrical properties of the devices were investigated. Increased Cu content improves lateral crystallization, but results in the formation of Cu-rich secondary phases in-between CIGS grain boundaries. Characterization of the completed devices shows that Cu content has an important effect on the device electrical properties and the dominant recombination mechanisms.

Funding

EPSRC grant number EP/N026438/1

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Research Unit

  • Centre for Renewable Energy Systems Technology (CREST)

Published in

IEEE PVSC 44

Citation

ARNOU, P. ... et al., 2017. Variation of Cu content of sprayed Cu(In,Ga)(S,Se)2 solar cells based on a Thiol-Amine solvent mixture. Presented at: IEEE PVSC 44, Washington DC, USA, 25-30 June 2017, pp.146-150.

Publisher

© IEEE

Version

AM (Accepted Manuscript)

Acceptance date

30/06/2017

Publication date

2017

Notes

© IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

ISBN

9781509056057

Language

en

Location

Washington DC

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