Zhu_J - AS-PVSEC 21 - Accepted - Ageing of amorphous silicon devices in dependence of irradiance dose.pdf (128.42 kB)
Ageing of amorphous silicon devices in dependence of irradiance dose
conference contribution
posted on 2015-06-15, 08:59 authored by Jiang Zhu, Martin BlissMartin Bliss, Tom BettsTom Betts, Ralph GottschalgThe ageing behaviour of amorphous silicon (a-Si) devices
is investigated in dependence of different light and
temperature conditions. Eight a-Si mini-modules are
illuminated and kept at constant temperature in an
environmental chamber. The ageing behaviour is characterised
in terms of a temperature-dependent irradiance dose rather
than the exposure time or irradiance dependence in order to
investigate possible ageing dependencies of environmental
strains and to develop models for device long-term
degradation.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Research Unit
- Centre for Renewable Energy Systems Technology (CREST)
Published in
21st International Photovoltaic Science and Engineering Conference (PVSEC-21)Pages
1 - 2 (2)Citation
ZHU, J. ... et al, 2011. Ageing of amorphous silicon devices in dependence of irradiance dose. 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), Japan, 28th November - 2nd December 2011, 2pp.Publisher
PVSECVersion
- AM (Accepted Manuscript)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/Publication date
2011Notes
This is a conference paper.Language
- en
Location
Fukuoka, JapanAdministrator link
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