Analysis and Comparison of Different Selenization Routes For Nanoparticle Ink Deposited Cu(In1-xGax)(SeyS1-y)2 Solar Cells - format corrections.pdf (545.8 kB)
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Analysis and comparison of different selenization routes for nanoparticle ink deposited Cu(In1-xGax)(SeyS1-y)2 solar cells

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conference contribution
posted on 09.02.2017, 11:54 by Alex Eeles, Ali AbbasAli Abbas, Nayia Arnou, Jake BowersJake Bowers, Michael WallsMichael Walls, Stephen Whitelegg, Paul Kirkham, Cary Allen, Stuart Stubbs, Zugang Liu, Ombretta Masala, Christopher Newman, Nigel Pickett
This paper investigates the effect of using different selenization sources, namely elemental Se and H2Se, on Cu(In1-xGax)(SeyS1-y)2 devices derived from depositions of nanoparticle inks. Nanoparticles used in this synthesis are chalcogenides (e.g. CuInGaS). The effect of the selenization species has a large effect on the performance and electrical properties of these devices. Elemental selenized devices show higher efficiencies (>16%) compared to H2Se processed devices (<12%). Various techniques are used in this study, including Raman spectroscopy, TEM, I-V-T, EQE, admittance spectroscopy and C-V-T to identify the difference in performance between the two selenization methods. Differences are observed in both the bulk and interface properties of the devices.

Funding

The authors would like to acknowledge the support of Innovate UK, project number 102235, and the EPSRC (EP/N508457/1) for the funding.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

43rd IEEE Photovoltaics Specialist Conference

Pages

2152 - 2156

Citation

EELES, A. ... et al, 2016. Analysis and comparison of different selenization routes for nanoparticle ink deposited Cu(In1-xGax)(SeyS1-y)2 solar cells. Presented at the 43rd IEEE Photovoltaics Specialist Conference (PVSC), Portland, OR, USA, 5th-10th June 2016, pp. 2152-2156.

Publisher

© IEEE

Version

AM (Accepted Manuscript)

Acceptance date

10/10/2016

Publication date

2016

Notes

© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

ISSN

0160-8371

Language

en

Location

Portland, OR