File(s) under embargo
Reason: Publisher requirement.
Cadmium Selenide (CdSe) as an active absorber layer for solar cells with Voc approaching 750 mV
Cadmium Selenide (CdSe) is a semiconductor material with a band gap (1.74 eV) suitable for top cell for the fabrication of tandem devices. Here we explore the optoelectronic properties of evaporated CdSe and the subsequent device performance. The as-deposited CdSe film (thickness ∼800 nm) has small grains t ∼ 200–500 nm) that grow to the order of several microns after cadmium chloride (CdCl2) treatment. In addition, the CdCl2 treatment yielded enhanced photoluminescence (PL) response and long carrier lifetime. However, in addition to a significant band edge PL, we observe a wide peak at energies below the bandgap, suggesting defect states in the absorbance affecting the recombination in the device. The CdSe material was used as an active layer in photovoltaic devices (device structure SnO2/CdSe/HTLs/Au) and achieved a device efficiency of 2.6% with Voc exceeding 750 mV, FF of 56%, and Jsc of 6.1 mAcm-2 when illuminated through the thin Au (front) side. The device efficiency can be improved by replacing gold (Au, 10 nm) which has relatively poor transmittance and sheet resistance. We will discuss the comprehensive evaluation of CdSe films and devices for the photovoltaic application.
Doped emitters to unlock lowest cost solar electricity
Engineering and Physical Sciences Research CouncilFind out more...
U.S. DOE’s office of Energy Efficiency and Renewable Energy (EERE) under Solar Energy Technologies Office (SETO), Cadmium Telluride Accelerator Consortium (CTAC) (NREL Sub-contract SUB-2021-10715)
Air Force Research Laboratory under agreement number FA9453-19-C-1002
- Mechanical, Electrical and Manufacturing Engineering
- Centre for Renewable Energy Systems Technology (CREST)
Published in2023 IEEE 50th Photovoltaic Specialists Conference (PVSC)
Source2023 IEEE 50th Photovoltaic Specialists Conference (PVSC)
- VoR (Version of Record)
Rights holder© IEEE
Publisher statement© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.