SEIA_2019 - conference1 - Version2.pdf (252.24 kB)
Download fileEffect of thin film interconnect inelasticity on MEMS pressure sensor hysteresis
conference contribution
posted on 2019-12-19, 13:22 authored by Youssef Hamid, David HuttDavid Hutt, David Whalley, Russell CraddockThermal hysteresis dominates precision errors in absolute low pressure piezoresistive Silicon-based MEMS
pressure sensors. A population of 10 experimental unpackaged “floating” bare devices were subjected to pressure and
temperature cycles resulting in a mean hysteresis error of initially 0.062 % of full scale (FS) that reduced to 0.036 %FS after
the third cycle. Within the limited 5 to 65 °C thermal cycles used in this study, this hysteresis is not predicted by the elastic
recovery regime and is attributed to low temperature creep phenomena caused by stresses, that develop as a result of the
coefficient of thermal expansion (CTE) mismatch between the Al-1 %Si bond pads and the Si substrate.
Funding
EPSRC CDT - Embedded Intelligence grant no EP/L014998/1
History
School
- Mechanical, Electrical and Manufacturing Engineering
Pages
174-176Source
Fifth International Conference on Sensors and Electronic Instrumentation Advances (SEIA' 2019)Publisher
IFSAVersion
- VoR (Version of Record)
Publisher statement
This is an Open Access Paper. It is published by IFSA under the Creative Commons Attribution 4.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/4.0/Publication date
2019-09-25Publisher version
Language
- en