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Effect of thin film interconnect inelasticity on MEMS pressure sensor hysteresis

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conference contribution
posted on 19.12.2019, 13:22 by Youssef Hamid, David HuttDavid Hutt, David Whalley, Russell Craddock
Thermal hysteresis dominates precision errors in absolute low pressure piezoresistive Silicon-based MEMS
pressure sensors. A population of 10 experimental unpackaged “floating” bare devices were subjected to pressure and
temperature cycles resulting in a mean hysteresis error of initially 0.062 % of full scale (FS) that reduced to 0.036 %FS after
the third cycle. Within the limited 5 to 65 °C thermal cycles used in this study, this hysteresis is not predicted by the elastic
recovery regime and is attributed to low temperature creep phenomena caused by stresses, that develop as a result of the
coefficient of thermal expansion (CTE) mismatch between the Al-1 %Si bond pads and the Si substrate.

Funding

EPSRC CDT - Embedded Intelligence grant no EP/L014998/1

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Pages

174-176

Source

Fifth International Conference on Sensors and Electronic Instrumentation Advances (SEIA' 2019)

Publisher

IFSA

Version

VoR (Version of Record)

Publisher statement

This is an Open Access Paper. It is published by IFSA under the Creative Commons Attribution 4.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/4.0/

Publication date

2019-09-25

Language

en

Location

Canary Islands (Tenerife), Spain

Event dates

25th September 2019 - 27th September 2019

Depositor

Mr Youssef Hamid Deposit date: 18 December 2019