05411142[1].pdf (855.81 kB)
Electrical mismatch within single junction amorphous silicon and micromorph tandem thin film PV modules
conference contribution
posted on 2011-03-09, 15:27 authored by Yingning Qiu, Tom BettsTom Betts, Ralph GottschalgDue to the electrical mismatch between the individual
cells, the actual efficiency of a PV module is always lower
than the sum of the cells under normal measurement
conditions. The effect of this electrical mismatch is
simulated for single junction amorphous silicon PV
modules as well as micromorph thin film PV modules.
This paper reports on the design of the realistic parameter
distribution for the I-V simulation. It shows that due to the
current mismatch in a double junction solar cell, these
devices seem to be more significantly affected by similar
variation in parameters, which would indicate that tighter
production control is necessary but also that it will be more
involved to measure these devices with sufficient accuracy.
It is shown that device mismatch actually results in a lower
fill factor, which is slightly different to what is seen for
single cells.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Research Unit
- Centre for Renewable Energy Systems Technology (CREST)
Citation
QIU, Y.N., BETTS, T.R. and GOTTSCHALG, R., 2009. Electrical mismatch within single junction amorphous silicon and micromorph tandem thin film PV modules. IN: 34th IEEE Photovoltaic Specialists Conference (PVSC) 2009, Philadelphia, USA, 7th-12th June, pp. 000911-000916.Publisher
© IEEEVersion
- VoR (Version of Record)
Publication date
2009Notes
This conference paper [© IEEE] is also available at: http://dx.doi.org/10.1109/PVSC.2009.5411142. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.ISBN
9781424429493ISSN
0160-8371Publisher version
Language
- en