Exploring metastable defect behavior in solution-processed antimony doped CIGS thin film solar cells

Togay, Mustafa; Ulicna, Sona; Bukhari, Syeda; Lisco, Fabiana; Bliss, Martin; Eeles, Alex; Walls, Michael; Bowers, Jake

Exploring metastable defect behavior in solution-processed antimony doped CIGS thin film solar cells

conference contribution

posted on 2018-12-13, 14:47 authored by Mustafa Togay, Sona Ulicna, Syeda Bukhari, Fabiana Lisco, Martin BlissMartin Bliss, Alex Eeles, Michael WallsMichael Walls, Jake BowersJake Bowers

This study investigates the metastable defect behavior from temperature dependent current density-voltage (JVT) and capacitance spectroscopy measurements in solutionprocessed antimony (Sb) doped CIGS thin film solar cells. From the Voc(T) analysis, the main recombination mechanism is found to be Schottky-Read-Hall recombination in the bulk. A detailed study of the carrier concentration, defect density and energy level defects was performed using capacitance spectroscopy. Admittance spectroscopy measurements revealed an admittance step at low temperatures with an activation energy of 42 meV.

History

School

Mechanical, Electrical and Manufacturing Engineering

Published in

7th World Conference on Photovoltaic Energy Conversion (WCPEC-7)

Citation

TOGAY, M. ... et al., Exploring metastable defect behavior in solution-processed antimony doped CIGS thin film solar cells. Presented at the IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Waikoloa, Hawaii, US, 10-15 Jun, pp. 1960-1965.

Publisher

Version

AM (Accepted Manuscript)

Publication date

2018

Notes

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