Loughborough University
Browse
2022 PVSC Ga-doping of MZO in CdSeTe_CdTe Thin Film Solar Cells.pdf (338.89 kB)

Ga-doping of MZO in CdSeTe/CdTe thin film solar cells

Download (338.89 kB)
conference contribution
posted on 2023-01-06, 09:53 authored by Mustafa TogayMustafa Togay, Tushar Shimpi, Sampath S Walajabad, Kurt BarthKurt Barth, Eric Don, Gabor Parada, Michael WallsMichael Walls, Jake BowersJake Bowers

Metastable effects in high efficiency MZO/CdSeTe/CdTe solar cells have been studied in an attempt to recover the device performance. Devices with the MZO buffer layer have shown an 'S' shaped behaviour in the J-V characteristics before any preconditioning. This is removed after light soaking under 1000 Wm-2 at 25 °C. However, this recovery remained only for a short period of time while the devices were stored under vacuum in the dark. Recent studies with Ga doping of the buffer MZO has shown the removal of this metastability in the J-V characteristics of CdTe devices can be achieved without light soaking. A significant improvement in conductivity and Hall signal has been measured with Ga doped MZO layers compared to previously measured MZO films. However, a gradual decrease in the Hall signal has been observed over time after films were light soaked and removed from the desiccator.

Funding

SuperSolar Hub Extension

Engineering and Physical Sciences Research Council

Find out more...

SOLplus - Improved Energy Efficiency of Solar PV Systems via Low Surface Energy Coatings

Engineering and Physical Sciences Research Council

Find out more...

Doped emitters to unlock lowest cost solar electricity

Engineering and Physical Sciences Research Council

Find out more...

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Research Unit

  • Centre for Renewable Energy Systems Technology (CREST)

Published in

2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)

Pages

658 - 660

Source

2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Version

  • AM (Accepted Manuscript)

Rights holder

© IEEE

Publisher statement

© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Publication date

2022-11-14

Copyright date

2022

ISBN

9781728161174

ISSN

0160-8371

Language

  • en

Location

Philadelphia, PA, USA

Event dates

5th June 2022 - 10th June 2022

Depositor

Prof Michael Walls. Deposit date: 5 January 2023

Usage metrics

    Loughborough Publications

    Categories

    No categories selected

    Exports

    RefWorks
    BibTeX
    Ref. manager
    Endnote
    DataCite
    NLM
    DC