In-situ micro bend testing of SiC and the effects of Ga+ ion damage
conference contributionposted on 11.08.2017, 11:29 by Stuart Robertson, Scott Doak, Zhaoxia Zhou, Houzheng Wu
The Young’s modulus of 6H single crystal silicon carbide (SiC) was tested with micro cantilevers that had a range of cross-sectional dimensions with surfaces cleaned under different accelerating voltages of Ga+ beam. A clear size effect is seen with Young’s modulus decreasing as the cross-sectional area reduces. One of the possible reasons for such size effect is the Ga+ induced damage on all surfaces of the cantilever. Transmission electron microscopy (TEM) was used to analyse the degree of damage, and the measurements of damage is compared to predictions by SRIM irradiation simulation.
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