Robertson_2017_J._Phys.__Conf._Ser._902_012002.pdf (773.83 kB)

In-situ micro bend testing of SiC and the effects of Ga+ ion damage

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conference contribution
posted on 11.08.2017, 11:29 by Stuart Robertson, Scott Doak, Zhaoxia Zhou, Houzheng Wu
The Young’s modulus of 6H single crystal silicon carbide (SiC) was tested with micro cantilevers that had a range of cross-sectional dimensions with surfaces cleaned under different accelerating voltages of Ga+ beam. A clear size effect is seen with Young’s modulus decreasing as the cross-sectional area reduces. One of the possible reasons for such size effect is the Ga+ induced damage on all surfaces of the cantilever. Transmission electron microscopy (TEM) was used to analyse the degree of damage, and the measurements of damage is compared to predictions by SRIM irradiation simulation.

History

School

  • Aeronautical, Automotive, Chemical and Materials Engineering

Department

  • Materials

Published in

emag2017

Citation

ROBERTSON, S. ...et al., 2017. In-situ micro bend testing of SiC and the effects of Ga+ ion damage. Journal of Physics: Conference Series, 902: 012002.

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© the Authors. Published by IOP Publishing

Version

NA (Not Applicable or Unknown)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution 3.0 Unported (CC BY 3.0) licence. Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/

Publication date

2017

Notes

This paper was presented at the EMAG 2017, Manchester, July 3-6th.This is an Open Access Article. It is published by IOP under the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/

ISSN

1742-6588

eISSN

1742-6596

Language

en

Location

Manchester

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