Investigation of localized phase changes using high resolution electron back-scatter diffraction in thin film cadmium telluride photovoltaic material with high lattice defect densities
conference contributionposted on 2020-01-24, 10:26 authored by Ali AbbasAli Abbas, A Munshi, KL Barth, WS Sampath, GD West, Michael WallsMichael Walls
This study focuses on the microstructural and crystallographic characteristics of cadmium telluride thin film photovoltaics using the novel characterization technique of transmission electron back-scatter diffraction (T-EBSD). Taking advantage of the increase in resolution of transmission electron back-scatter diffraction capabilities, identification of localized changes of phase within the cadmium telluride grains have been detected. T-EBSD of the cadmium telluridegrains show areas containing very high defect densities indexed to the hexagonal phase whereas the rest of the grain is indexed to the cubic phase, showing that the high densities of defects alters the stacking formation enough to causes a localized change of phase, forming two different phases within the same grain.
OTH Supersolar hub - Extension : EP/P02484X/1
IAA 17 - Michael Walls - EPG June 17
NSF I/UCRC and AIR programs
- Mechanical, Electrical and Manufacturing Engineering
- Centre for Renewable Energy Systems Technology (CREST)
Published in2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
Pages1692 - 1696
Source2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
- AM (Accepted Manuscript)
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