METROLOGY OF SILICON PHOTOVOLTAIC CELLS USING COHERENCE.pdf (726.17 kB)
Metrology of silicon photovoltaic cells using coherence correlation interferometry
conference contributionposted on 2014-05-23, 09:14 authored by Bianca Maniscalco, Piotr Kaminski, M. Conroy, D. Mansfield, Y. Yu, Kevin BassKevin Bass, Gianfranco ClaudioGianfranco Claudio, Michael WallsMichael Walls
Surface metrology plays an important role in the development and manufacture of photovoltaic cells and modules. Coherence Correlation Interferometry (CCI) is a non-contacting surface metrology tool with potentially important applications in the characterization of photovoltaic devices. Its major advantages are that it is fast, non-destructive and it takes its data from a relatively large and hence representative area. A special mode, called “stitching x-y” can be used to provide information on a wider area, combining measurements taken in different zones of the sample. The technique is capable of providing surface roughness and step height measurements with sub-nanometre precision. It is also capable of measuring quantitatively surface texture and surface form in three dimensions and it now has a new capability to measure thin film and thick film thickness. CCI measurements are presented on a range of features on silicon photovoltaic cells including surface roughness, surface texture, the profile of laser grooves for buried contacts as well as the roughness and thickness of silicon nitride thin films. Complementary analysis using spectroscopic ellipsometry is also presented for verification. CCI is a sensitive, non-destructive metrology technique with potential use as an in-line quality assurance tool in the large scale production of photovoltaic modules.
- Mechanical, Electrical and Manufacturing Engineering
- Centre for Renewable Energy Systems Technology (CREST)
CitationMANISCALCO, B. ... et al., 2011. Metrology of silicon photovoltaic cells using coherence correlation interferometry. IN: 37th IEEE Photovoltaic Specialists Conference (PVSC), Seattle, 19-24 June 2011, pp. 3370 - 3374.
- AM (Accepted Manuscript)
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