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Modeling A-Si module ageing using the concept of environmental dose

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conference contribution
posted on 05.03.2014, 09:52 by Jiang Zhu, Martin BlissMartin Bliss, Tom BettsTom Betts, Ralph Gottschalg
This paper investigates ageing of a-Si devices using indoor controlled irradiance and temperature stresses testing. Device maximum power degradation is analyzed against the proposed environmental dose, which is derived from the microscopic model of defects generation and annealing of a-Si material. This dose model well describes the ageing behavior for the devices degraded at different conditions of irradiances from 130-500W/m2 and temperatures from 25-85°C. This, thus, enables the comparison study of device ageing under different environmental conditions and allows the attempt to correlate the outdoor environment to indoor performance.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Citation

ZHU, J. ... et al., 2013. Modeling A-Si module ageing using the concept of environmental dose. IN: IEEE 39th Photovoltaic Specialists Conference, Tampa, USA, 16-21 June 2013, pp. 1625 - 1630.

Publisher

© IEEE

Version

AM (Accepted Manuscript)

Publication date

2013

Notes

This is a conference paper. The definitive version is available at: http://ieeexplore.ieee.org/ [© IEEE]. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Language

en