PVSC39_ZHU.pdf (3.96 MB)
Download fileModeling A-Si module ageing using the concept of environmental dose
conference contribution
posted on 2014-03-05, 09:52 authored by Jiang Zhu, Martin BlissMartin Bliss, Tom BettsTom Betts, Ralph GottschalgThis paper investigates ageing of a-Si devices using
indoor controlled irradiance and temperature stresses testing.
Device maximum power degradation is analyzed against the
proposed environmental dose, which is derived from the
microscopic model of defects generation and annealing of a-Si
material. This dose model well describes the ageing behavior for
the devices degraded at different conditions of irradiances from
130-500W/m2
and temperatures from 25-85°C. This, thus,
enables the comparison study of device ageing under different
environmental conditions and allows the attempt to correlate the
outdoor environment to indoor performance.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Citation
ZHU, J. ... et al., 2013. Modeling A-Si module ageing using the concept of environmental dose. IN: IEEE 39th Photovoltaic Specialists Conference, Tampa, USA, 16-21 June 2013, pp. 1625 - 1630.Publisher
© IEEEVersion
- AM (Accepted Manuscript)
Publication date
2013Notes
This is a conference paper. The definitive version is available at: http://ieeexplore.ieee.org/ [© IEEE]. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.Publisher version
Language
- en