PVSC39_ZHU.pdf (3.96 MB)
Download fileModeling A-Si module ageing using the concept of environmental dose
conference contribution
posted on 2014-03-05, 09:52 authored by Jiang Zhu, Martin BlissMartin Bliss, Tom BettsTom Betts, Ralph GottschalgThis paper investigates ageing of a-Si devices using
indoor controlled irradiance and temperature stresses testing.
Device maximum power degradation is analyzed against the
proposed environmental dose, which is derived from the
microscopic model of defects generation and annealing of a-Si
material. This dose model well describes the ageing behavior for
the devices degraded at different conditions of irradiances from
130-500W/m2
and temperatures from 25-85°C. This, thus,
enables the comparison study of device ageing under different
environmental conditions and allows the attempt to correlate the
outdoor environment to indoor performance.
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- Mechanical, Electrical and Manufacturing Engineering