Modeling A-Si module ageing using the concept of environmental dose

Zhu, Jiang; Bliss, Martin; Betts, Tom; Gottschalg, Ralph

PVSC39_ZHU.pdf (3.96 MB)

Modeling A-Si module ageing using the concept of environmental dose

conference contribution

posted on 05.03.2014, 09:52 authored by Jiang Zhu, Martin BlissMartin Bliss, Tom BettsTom Betts, Ralph Gottschalg

This paper investigates ageing of a-Si devices using indoor controlled irradiance and temperature stresses testing. Device maximum power degradation is analyzed against the proposed environmental dose, which is derived from the microscopic model of defects generation and annealing of a-Si material. This dose model well describes the ageing behavior for the devices degraded at different conditions of irradiances from 130-500W/m2 and temperatures from 25-85°C. This, thus, enables the comparison study of device ageing under different environmental conditions and allows the attempt to correlate the outdoor environment to indoor performance.

History

School

Mechanical, Electrical and Manufacturing Engineering

Citation

ZHU, J. ... et al., 2013. Modeling A-Si module ageing using the concept of environmental dose. IN: IEEE 39th Photovoltaic Specialists Conference, Tampa, USA, 16-21 June 2013, pp. 1625 - 1630.

Publisher

Version

AM (Accepted Manuscript)

Publication date

2013

Notes

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