RC71.pdf (942.67 kB)
Download fileModeling of the power cycling performance of a Si on Si flip chip assembly
conference contribution
posted on 2009-02-11, 16:25 authored by Andrew R. Ochana, David HuttDavid Hutt, David Whalley, Farhad Sarvar, A. Al-HabaibehFlip Chip (FC) technology offers many advantages over
conventional surface mount technology, including a smaller
device footprint and higher interconnection density. Low
power but complex consumer items, such as mobile
telecommunications devices, utilise this packaging
technology and it is likely to spread to other electronics
sectors where components have higher power dissipations
and/or they have to operate in a hostile environment.
As the scope for FC packaging broadens, a reliable means of
establishing the long term performance of a particular
package is necessary. Traditionally thermal cycling has been
a primary reliability test for electronic assemblies including
FC, however this fails to capture the behaviour of assemblies
where the component thermal expansion is well matched to
that of the substrate due to the isothermal heating and cooling
of the assembly. In this situation power cycling offers an
alternative means of determining the module performance.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Citation
OCHANA, A.R. ....et al., 2006. Modeling of the power cycling performance of a Si on Si flip chip assembly. IN: Proceedings of the Tenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronics Systems, (ITHERM '06), May 30 -June 2, San Diego, CA , pp. 243 - 250.Publisher
© IEEEVersion
- VoR (Version of Record)
Publication date
2006Notes
This is a conference paper [© IEEE]. It is also available at: http://ieeexplore.ieee.org/ Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.ISBN
0780395247ISSN
1087-9870Language
- en