Zhu_J - PVSAT 9 - Accepted - Modelling of realistic annealing behaviour of a-Si PV devices.pdf (389.15 kB)
Modelling of realistic annealing behaviour of amorphous silicon photovoltaic devices
conference contributionposted on 2015-06-15, 09:24 authored by Jiang Zhu, Martin BlissMartin Bliss, Tom BettsTom Betts, Ralph Gottschalg
Long-term degradation and annealing behaviour of a-Si mini-modules is investigated in this paper. Four devices were firstly degraded by light and then annealed in the dark at temperatures ranging from 65-85°C. Dark annealing rates were obtained for each temperature. Further annealing with light bias was carried out for two of the devices in order to study the interaction between the light-induced degradation and thermal annealing process. Results demonstrate that the annealing in the dark is strongly influenced by the operating temperature but also dependent on the history of the devices. Annealing is a self-limiting process and is significantly influenced by the light intensity in the short-term exposure, giving rise for a balance-equation for modelling purposes.
- Mechanical, Electrical and Manufacturing Engineering
- Centre for Renewable Energy Systems Technology (CREST)
Pages215 - 218 (4)
CitationZHU, J. ... et al, 2013. Modelling of realistic annealing behaviour of amorphous silicon photovoltaic devices. IN: Proceedings of the 9th Photovoltaic Science Applications and Technology Conference (PVSAT-9), 10th-12th April 2013, Swansea, Wales, pp. 215-218
Publisher© The Solar Energy Society (UK-ISES)
- AM (Accepted Manuscript)
Publisher statementThis work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/
NotesThis is a conference paper.