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Modelling spectral irradiation effects on single- and multijunction amorphous silicon photovoltaic devices
conference contributionposted on 2011-03-15, 12:17 authored by Tom BettsTom Betts, Ralph Gottschalg, David Infield
It has been previously reported that variations in the spectral irradiance under which an amorphous silicon device operates can have a significant effect on its elecbical performance. often contributing to enhanced system yields compared to crystalline-based systems. In this work, spectral irradiance data based on models and measurements taken at the Centre for Renewable Energy Systems Technology (CREST) in the UK are presented. These are input into electrical models for amorphous silicon devices incorporating different number of junctions in order to investigate the impact of changing spectral irradiation. The results can be classified broadly as primary effects. those accounting for the available spectrally useful irradiance and secondary effects that consider the effects of mismatched currents in the slacked cells of multi-junction devices. The modeled short circuit currents correlate well with measurements and are demonstrated as a useful tool for further investigation.
- Mechanical, Electrical and Manufacturing Engineering
- Centre for Renewable Energy Systems Technology (CREST)
CitationBETTS, T.R., GOTTSCHALG, R. and INFIELD, D., 2002. Modelling spectral irradiation effects on single- and multijunction amorphous silicon photovoltaic devices. IN: Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, New Orleans, May 19-24, pp. 1242-1245
- VoR (Version of Record)
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