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Modelling spectral irradiation effects on single- and multijunction amorphous silicon photovoltaic devices
conference contribution
posted on 2011-03-15, 12:17 authored by Tom BettsTom Betts, Ralph Gottschalg, David InfieldIt has been previously reported that variations in the
spectral irradiance under which an amorphous silicon
device operates can have a significant effect on its elecbical
performance. often contributing to enhanced system
yields compared to crystalline-based systems.
In this work, spectral irradiance data based on models
and measurements taken at the Centre for Renewable
Energy Systems Technology (CREST) in the UK are presented.
These are input into electrical models for amorphous
silicon devices incorporating different number of
junctions in order to investigate the impact of changing
spectral irradiation. The results can be classified broadly
as primary effects. those accounting for the available
spectrally useful irradiance and secondary effects that
consider the effects of mismatched currents in the
slacked cells of multi-junction devices. The modeled short
circuit currents correlate well with measurements and are
demonstrated as a useful tool for further investigation.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Research Unit
- Centre for Renewable Energy Systems Technology (CREST)
Citation
BETTS, T.R., GOTTSCHALG, R. and INFIELD, D., 2002. Modelling spectral irradiation effects on single- and multijunction amorphous silicon photovoltaic devices. IN: Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, New Orleans, May 19-24, pp. 1242-1245Publisher
© IEEEVersion
- VoR (Version of Record)
Publication date
2002Notes
This is a conference paper [© IEEE]. It is also available at: http://ieeexplore.ieee.org/ Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.ISBN
0780374711ISSN
1060-8371Publisher version
Language
- en