Non-destructive defect detection for MEMS devices using transient thermography

Wang, Xiaoting; Whalley, David; Silberschmidt, Vadim

ESTC 2016 Non-Destructive Defect Detection for MEMS Devices Using Transient Thermography.pdf (8.43 MB)

Non-destructive defect detection for MEMS devices using transient thermography

conference contribution

posted on 2018-07-17, 08:44 authored by Xiaoting Wang, David Whalley, Vadim SilberschmidtVadim Silberschmidt

This paper investigates the use of transient infrared thermography in a transmission mode for subsurface defect detection within thin multilayer structures such as those found in MEMS devices. This was undertaken through the use of finite element analysis based simulations for several sizes of defects and for several combinations of substrate and thin film materials. The maximum temperature difference observable at the sample surface between defective and non-defective regions of the sample was investigated as a function of various parameters of the sample materials and defect geometry.

History

School

Mechanical, Electrical and Manufacturing Engineering

Published in

2016 6th Electronic System-Integration Technology Conference (ESTC) 2016 6th Electronic System-Integration Technology Conference, ESTC 2016

Citation

WANG, X., WHALLEY, D.C. and SILBERSCHMIDT, V.V., 2016. Non-destructive defect detection for MEMS devices using transient thermography. Presented at the 2016 6th Electronic System-Integration Technology Conference (ESTC), Grenoble, France, 13-15 September 2016.

Publisher

Version

AM (Accepted Manuscript)

Acceptance date

2016-09-01

Publication date

2016

Notes

© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.