Non-destructive defect detection for MEMS devices using transient thermography

This paper investigates the use of transient infrared thermography in a transmission mode for subsurface defect detection within thin multilayer structures such as those found in MEMS devices. This was undertaken through the use of finite element analysis based simulations for several sizes of defects and for several combinations of substrate and thin film materials. The maximum temperature difference observable at the sample surface between defective and non-defective regions of the sample was investigated as a function of various parameters of the sample materials and defect geometry.