A method is demonstrated to optimise pulsed IV measurements of high capacitance PV modules, using dark IV and impedance measurements. The impact of capacitance during I-V measurements is minimised by changing the shape of the voltage ramp. The optimisation can be performed simply and automatically for each individual module during the charging period for the simulator. As an additional benefit of this method the extracted C-V profile can be used to estimate the minority carrier lifetime for the module. The system is demonstrated by using a high capacitance n type module, which is successfully measured in a single 10ms illumination pulse.
- Mechanical, Electrical and Manufacturing Engineering
Published inIEEE Photovoltaic Specialists Conference
Conference Record of the IEEE Photovoltaic Specialists Conference
Pages3693 - 3697
CitationEELES, A., GOTTSCHALG, R. and BETTS, T.R., 2016. Optimising I-V measurements of high capacitance modules using dark impedance measurements. Presented at the IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, OR, USA, 5th-10th June 2016, pp. 3693-3697.
VersionAM (Accepted Manuscript)
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