M Bliss - PV-SAT 7 - Performance of an a-Si Mini Module in the Initial Degraded and Annealed States.pdf (472.41 kB)
Performance of an amorphous silicon mini module in the initial, light-induced degraded and annealed states
conference contributionposted on 2011-05-11, 09:29 authored by Martin BlissMartin Bliss, Jiang Zhu, Tom BettsTom Betts, Ralph Gottschalg
This work analyses the performance of single junction amorphous silicon (a-Si) mini modules in three main states: the initial non-degraded state, degraded state after light soaking and recovered state after thermal annealing. The applied methods of controlled indoor light-soaking and thermal annealing are detailed. Performance measurements are carried out under varying spectrum (E), light intensity (G) and temperature (T). Results show a reduction in STC power of up to 27.5% during the first 250h light soaking and a recovery of 56% after annealing for 250h at 80°C in the dark. After light soaking, devices also showed a reduction in low light performance and an increase in temperature coefficients, which was partly re-versed after annealing.
- Mechanical, Electrical and Manufacturing Engineering
- Centre for Renewable Energy Systems Technology (CREST)
CitationBLISS, M. ... et al, 2011. Performance of an amorphous silicon mini module in the initial, light-induced degraded and annealed states. IN: Hutchins, M. and Pearsall, N. (eds). Proceedings of 7th Photovoltaic Science Application and Technology Conference (PVSAT-7), Edinburgh, UK, 6th-8th April, pp.145-148.
PublisherThe Solar Energy Society
- VoR (Version of Record)
Publisher statementThis work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/
NotesThis is a conference paper.