Photoluminescence imaging analysis of doping in thin film CdS and CdS/CdTe devices

Potamialis, Christos; Lisco, Fabiana; Maniscalco, Bianca; Togay, Mustafa; Abbas, Ali; Bliss, Martin; Bowers, Jake; Walls, Michael; Rimmaudo, I.; Fernandez, R. Mis; Rejon, V.; Pena, J.L.

Photoluminescence imaging analysis of doping in thin film CdS and CdS/CdTe devices

conference contribution

posted on 2017-10-23, 10:38 authored by Christos Potamialis, Fabiana Lisco, Bianca Maniscalco, Mustafa Togay, Ali AbbasAli Abbas, Martin BlissMartin Bliss, Jake BowersJake Bowers, Michael WallsMichael Walls, I. Rimmaudo, R. Mis Fernandez, V. Rejon, J.L. Pena

The use of photoluminescence (PL) imaging analysis to assess the effectiveness of the passivation treatment due to the presence of chlorine in CdS thin films has been investigated. In this work, we show that the chlorine doping effect in the CdS window layer can be detected by PL imaging analysis, due to the formation of a defect complex of sulfur vacancy and ClS (VS-ClS) and complexes between halogen ions and cadmium vacancies (VCd-ClS). CdTe devices with differently doped CdS layers were investigated. PL imaging, TEM, IV performance indicators and EQE analysis were performed to understand the effect of the different dopants on the electrical performances of CdTe devices.

History

School

Mechanical, Electrical and Manufacturing Engineering

Published in

44th IEEE Photovoltaic Specialist Conference

Citation

POTAMIALIS, C. ...et al., 2017. Photoluminescence imaging analysis of doping in thin film CdS and CdS/CdTe devices. Presented at the 2017 IEEE 44th. Photovoltaic Specialists Conference (PVSC), Washington, D.C., June 25-30th, pp. 2457-2461.

Publisher

IEEE

Version

AM (Accepted Manuscript)

Acceptance date

2017-06-23

Publication date

2017

Notes

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