Power handling of a photoconductive microwave switch

Kowalczuk, Emma K.; Seager, Rob; Panagamuwa, Chinthana

Power handling of a photoconductive microwave switch

conference contribution

posted on 2017-03-07, 13:46 authored by Emma K. Kowalczuk, Rob SeagerRob Seager, Chinthana PanagamuwaChinthana Panagamuwa

The power handling performance of a photoconductive microwave switch up to an RF input power of 44dBm (25W) is presented. The switch consists of a lightly doped die of silicon mounted over a gap in a transmission line. A 2GHz signal is applied through the switch and the 1dB compression point is analysed.

History

School

Mechanical, Electrical and Manufacturing Engineering

Published in

Loughborough Antennas and Propagation Conference

Citation

KOWALCZUK, E.K., SEAGER, R.D. and PANAGAMUWA, C.J., 2016. Power handling of a photoconductive microwave switch. Presented at the Loughborough Antennas and Propagation Conference (LAPC 2016), Loughborough, 14-15 Nov.

Publisher

Version

AM (Accepted Manuscript)

Acceptance date

2016-08-24

Publication date

2016

Notes

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