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The origins of void formation in sputtered CdSe
conference contribution
posted on 2021-10-18, 08:54 authored by Rachael Greenhalgh, Pete Hatton, Vlad KornienkoVlad Kornienko, Ali AbbasAli Abbas, Pooja GoddardPooja Goddard, Roger Smith, Jake BowersJake Bowers, Michael WallsMichael WallsThe introduction of selenium to the front of thin film CdTe photovoltaic devices has led to a sharp increase in conversion efficiency. One way to introduce the selenium is to first deposit a layer of CdSe on to the buffer layer before depositing a CdTe layer at the back. The two layers are then inter-diffused during the cadmium chloride activation. Magnetron sputtering is an attractive deposition method to deposit the CdSe, but previous studies have revealed the presence of deleterious voids in the finished sputtered CdSe/CdTe devices. In this paper, we show that the voids are caused by the accumulation of argon into bubbles formed during activation with experimental and theoretical evidence. The bubbles are similar to those previously observed in sputtered CdTe. These bubbles can also develop into blisters causing significant exfoliation of the film surface.
Funding
EP/W00092X/1
EPSRC Centre for Doctoral Training in New and Sustainable PV
Engineering and Physical Sciences Research Council
Find out more...History
School
- Mechanical, Electrical and Manufacturing Engineering
Research Unit
- Centre for Renewable Energy Systems Technology (CREST)
Published in
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)Pages
886 - 889Source
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)Publisher
IEEEVersion
- VoR (Version of Record)
Rights holder
© IEEEPublisher statement
Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Publication date
2021-08-26Copyright date
2021ISBN
9781665419222ISSN
0160-8371Publisher version
Language
- en